Formation of a tantalum-nitride layer

摘要

A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

主权项

1. A method of forming a tantalum nitride film, comprising:
(a) chemisorbing tantalum from a tantalum containing precursor to form a layer of tantalum containing compound on a substrate, wherein the substrate is maintained at a temperature between 400 degrees Celsius to 600 degrees Celsius; (b) stopping the flow of the tantalum-containing precursor; (c) pulsing a purge gas to the substrate and stopping the flow of the purge Gas to provide a pulse time of less than about 1 second; (d) chemisorbing nitrogen from a nitrogen containing precursor to a layer of nitrogen containing compound on the layer of tantalum containing compound; (e) stopping the flow of the nitrogen containing precursor; (f) pulsing the purge gas to the substrate and stopping the flow of the purge gas to provide a pulse time of less than about 1 second; and repeating (a)-(f) until a desired thickness of the layers of tantalum containing compound and nitrogen containing compound is reached.