| 发明名称 | Method of operating a nonvolatile memory by reprogramming failed cells using a reinforced program pulse in an idle state and memory system thereof | ||
| 摘要 | A memory system, and an operation method of a nonvolatile memory, include programming memory cells using a normal program pulse, reading out a first set of data from the memory cells, detecting failed cells based on the first set of data, storing information about the failed cells in a buffer, and reprogramming the failed cells using a reinforced program pulse in an idle state based on the information stored in the buffer. | ||
| 申请公布号 | US9013934(B2) | 申请公布日期 | 2015.04.21 |
| 申请号 | US201314068076 | 申请日期 | 2013.10.31 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lee Jung Hyuk |
| 分类号 | G11C7/22;G11C29/08;G11C29/42;G11C29/44;G11C29/52;G11C11/16 | 主分类号 | G11C7/22 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. An operation method of a nonvolatile memory, comprising: programming a plurality of memory cells using a normal program pulse; reading out a first set of data from the plurality of memory cells; detecting failed cells from among the plurality memory cells based on the first set of data; storing information about the failed cells in a buffer; and reprogramming the failed cells using a reinforced program pulse in an idle state based on the information stored in the buffer. | ||
| 地址 | Gyeonggi-do KR | ||