SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce contact resistance between a substrate and an electrode without leaving a damage on a gallium nitride substrate, which is caused by a surface treatment on the gallium nitride substrate.SOLUTION: A manufacturing method of a semiconductor device having a substrate 5 composed of gallium nitride and an electrode 7 forming ohmic contact with the substrate 5, in which the substrate 5 has a gallium polar face and a nitrogen polar face opposite to the gallium polar face comprises: a process of performing wet etching using hydrochloric acid on the nitrogen polar face; and a process of laminating metal to be the electrode 7 on the wet etched nitrogen polar face.