| 摘要 |
<p>Provided are a method for producing a multilayer thin film and an MTJ structure including the multilayer thin film produced thereby. The method for producing a multilayer thin film comprises the steps of: forming, on a substrate, a crystallization assisting layer including an oxide-based material layer including an oxide-based material of which a main element is a first ferromagnetic material; forming the multilayer thin film including a second ferromagnetic material on the crystallization assisting layer; and heating the multilayer thin film formed on the crystallization assisting layer to crystallize the multilayer thin film. Accordingly, a method for producing a multilayer thin film having high perpendicular magnetic anisotropy by means of heating temperature used in an actual memory device process can be provided.</p> |
