| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can easily remove a deposited reaction product having a high boiling point when the reaction product deposits on an inner wall of an etching device.SOLUTION: A semiconductor device manufacturing method of etching a semiconductor substrate at least having an upper layer film on an etching resistant material by using plasma etching equipment having a processing chamber comprises the steps of: carrying a semiconductor substrate in a processing chamber and subsequently etching the upper layer film to form a lift-off layer on the processing chamber inner wall in a state where the semiconductor substrate is carried in the processing chamber; and etching the etching resistant material and performing a cleaning treatment on the processing chamber inner wall after carrying out the semiconductor substrate from the plasma etching equipment. In the etching process of the etching resistant material, a reaction product of the etching resistant material deposits on the processing chamber inner wall where the lift-off layer is formed. In the cleaning treatment, by removing the lift-off layer, a layer of the reaction product is removed.</p> |
