PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To enable both matching units to perform stable and accurate matching operation in a case where two kinds of high-frequency powers supplied to a processing container are modulated simultaneously with pulses having different frequencies.SOLUTION: In this plasma processing apparatus, in a case where powers of a high-frequency wave RFfor plasma generation and a high-frequency wave RFfor attracting ions are modulated with first and second pulses PSand PShaving different frequencies, at a matching unit 40 of a plasma generation system, an impedance sensor 96A calculates an average value of a load impedance (a primary moving average value ma) on a high-frequency power feeding line 43 for each cycle of the second pulse PSwith the lower frequency, and outputs a load impedance measurement value on the basis of the average value of the load impedance. A matching controller 94A variably controls reactances of reactance elements Xand Xin a matching circuit 88A so that the load impedance measurement value is accorded with or approximate to a matching point (50 &OHgr;).