发明名称 WAFER PROCESSING METHOD
摘要 <p>The purpose of the present invention is to provide a method of processing wafers in ways to reduce the defect ratio of chip mounting. By implementing the partitioning step, one can divide a wafer (W) into individual chips (C), followed by a step to irradiate the chips. By irradiating the ultraviolet ray or plasma on the chip′s mounted surface (C1) one can generate ozone and reactive oxygen species, thereby removing organic residues on the mounted surface (C1) of the chip. In this way one can remove organic materials generated in the process of partitioning as well as those generated in the process of wafer (W) handling so that defects can be reduced in the chip mounting process.</p>
申请公布号 KR20150042133(A) 申请公布日期 2015.04.20
申请号 KR20140134781 申请日期 2014.10.07
申请人 发明人
分类号 H01L21/26;H01L21/301;H01L21/76 主分类号 H01L21/26
代理机构 代理人
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