| 摘要 |
Provided are a ferromagnetic multilayer thin film and an MTJ structure. The ferromagnetic multilayer thin film includes at least two ferromagnetic layers with perpendicular magnetic anisotropies and an insertion layer which is located between the ferromagnetic layers and includes a B-based material. Therefore, the critical thickness of the ferromagnetic multilayer thin film with the perpendicular magnetic anisotropy is increased by including the insertion layer in the ferromagnetic multilayer thin film. Thereby, thermal stability is improved by increasing the volume of the ferromagnetic multilayer thin film. |
