发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which can reduce a stress acting on a solder bump.SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a semiconductor chip 30 with an electrode pad 32 being formed; forming on the electrode pad 32, a low-wettability part 36 having low wettability against a solder; printing a flux-containing solder paste 40a so as to cover an apex 36a of the low-wettability part 36; and forming a solder bump 40b to be electrically connected with the electrode pad 32 by performing reflow treatment on the solder paste 40, in which a void 41 is formed in the solder bump 40 by contact and stay of a gas generated from the flux on the apex 36a of the low-wettability part 36.</p>
申请公布号 JP2015076429(A) 申请公布日期 2015.04.20
申请号 JP20130209966 申请日期 2013.10.07
申请人 DENSO CORP 发明人 TSUZUKI YASUAKI;FUKADA TAKESHI
分类号 H01L21/60;H05K3/34 主分类号 H01L21/60
代理机构 代理人
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