| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method for plasma etching a sample having a structure arranged by alternately and repeatedly laminating a Si layer and a SiGe layer, by which isotropic etching can be selectively performed on the SiGe layers rather than the Si-layers.SOLUTION: A dry etching method for selectively performing isotropic etching on each SiGe film of a multilayer film arranged by alternately and repeatedly laminating a Si-layer and a SiGe layer, comprises the step of etching the SiGe films by pulse-modified plasma while using NFgas. |
