| 摘要 |
PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing which solves the problem of high etching and resultant impairment of smoothness of a III-V group metal film formed on a source or drain in conventional chemical mechanical polishing methods with e.g. a slurry, reduces etching of III-V group materials and allows high-speed polishing of III-V group materials and a chemical mechanical polishing method using it.SOLUTION: An aqueous dispersion for chemical mechanical polishing is for polishing a to-be-polished surface containing a III-V group material 20 and comprises (A) an abrasive grain, (B) an alkanolamine having a 3-8C hydroxyalkyl group and (C) an oxidant. The abrasive grain (A) is colloidal silica and has secondary particle sizes of 10-150 nm. The ingredient (B) is one or more compounds selected from monoisopropanolamine, diisopropanolamine and triisopropanolamine. The oxidant (C) is hydrogen peroxide. |
