| 摘要 |
PROBLEM TO BE SOLVED: To reduce a defective fraction when a through electrode of a low-dielectric constant insulating film is formed.SOLUTION: A Low-k insulating film is formed of a weaker material compared with SiO2 and the like, and has a problem that, when used as an interlayer insulating film, the Low-k insulating film is retreated at plasma etching or at cleaning, and processing shape abnormalities may be generated. When an upper chip having at least one interlayer Low-k insulating film is formed, a guard ring 71 is formed at a part where a through electrode to be electrically connected with a lower chip is formed, by overlapping wires and vias of respective wiring layers in a vertical structure (in series) so as to be contacted with the through electrode. This disclosure can be applied to, for example, a CMOS solid-state imaging device used for an electronic apparatus such as a camera device. |
