| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for forming a pattern, excellent in etching resistance against chlorine-based gas when a photocurable nanoimprint composition is used in dry etching of a substrate such as sapphire.SOLUTION: A method for forming a pattern includes the steps of: applying a photocurable nanoimprint composition on a substrate, the photocurable nanoimprint composition containing a hydrolysis mixture (A) including hydrolysate of an organosilicon compound having a (meth)acrylic group and hydrolysate of a specific metal alkoxide, a polymerizable monomer (B) having a (meth)acrylic group, and a photoinitiator (C), and then drying the composition at a temperature of 150-250°C to form a coating film comprising the composition; bringing the coating film in contact with a pattern formation surface of a mold having a pattern formed thereon and irradiating the coating film with light in such a state to cure the coating film; and separating the mold from the cured coating film and forming a pattern corresponding to the pattern formed on the pattern formation surface of the mold, on the substrate. |
