Method of manufacturing a three dimensional semiconductor memory device and the three dimensional semiconductor memory device fabricated by the method

摘要

A method for manufacturing a 3D semiconductor memory device includes the steps of: stacking a bottom insulation layer, a bottom sacrificial layer, intermediate insulation layers and intermediate sacrificial layers which are alternatively arranged, a top sacrificial layer, and a top insulation layer; forming a channel hole to expose the substrate by vertically passing through the bottom insulation layer, the bottom sacrificial layer, the intermediate insulation layers, the intermediate sacrificial layers, the top sacrificial layer, and the top insulation layer; and forming a semiconductor pattern on the substrate exposed in the channel hole by a selective epitaxial growth. The step of forming the semiconductor pattern includes the steps of: forming a bottom epitaxial layer; doping the bottom epitaxial layer with an impurity; and forming a top epitaxial layer on the bottom epitaxial layer. The formation of the bottom epitaxial layer, the impurity doping of the bottom epitaxial layer, the formation of the top epitaxial layer are performed with an in-situ method.