| 发明名称 |
PASSIVATION COMPOSITE, PASSIVATION METHOD, THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
| 摘要 |
<p>The present invention is related to a composite of a passivation layer, a passivation method, thin-film transistors, and a method to manufacture thin-film transistors. The composite of a passivation layer according to an embodiment of the present invention may include yttrium as well as monovalent, bivalent, trivalent, and quadrivalent metal for doping the passivation layer.</p> |
| 申请公布号 |
KR101512726(B1) |
申请公布日期 |
2015.04.20 |
| 申请号 |
KR20130122872 |
申请日期 |
2013.10.15 |
| 申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
KIM, HYUN JAE;CHOI, UY HYUN;YOON, DOO HYUN;YOON, SEOK HYUN;TAK, YOUNG JUN |
| 分类号 |
H01L21/31;H01L29/786 |
主分类号 |
H01L21/31 |
| 代理机构 |
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