| 摘要 |
The method involves forming a hole (104) through a face of a substrate (100) for making an upper part (112) of a conducting connection element (110) by formation of a conducting material in the hole. Another hole (134) is formed through another face of the substrate for making a lower part (142) of the conducting connection element. A layer of a given material is formed on the latter face of the substrate before forming the latter hole, where the Young's modulus and coefficient of thermal expansion of the material are higher than that of the substrate, respectively. An independent claim is also included for an interconnection structure. |
