摘要 |
本发明提供一种光伏装置的制造方法,包括在一基板上形成一吸收体层,其中吸收体层包括一吸收体材料,在吸收体层上形成一缓冲层,在缓冲层上形成一前侧透明层,并且在吸收体层上形成缓冲层的步骤之后,将此光伏装置暴露在热能或辐射中,以在约80℃至约500℃的温度范围持续一段时间。 A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80℃ to about 500℃ |