发明名称 MEMORIES AND METHODS OF OPERATING MEMORIES HAVING MEMORY CELLS SHARING A RESISTANCE VARIABLE MATERIAL
摘要 Memories and methods of operating memories having memory cells sharing a resistance variable material.
申请公布号 US2015103590(A1) 申请公布日期 2015.04.16
申请号 US201414551317 申请日期 2014.11.24
申请人 MICRON TECHNOLOGY, INC. 发明人 Redaelli Andrea
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A memory, comprising: a resistance variable material; a first heater under a first memory cell area of the resistance variable material; a second heater under a second memory cell area of the resistance variable material and spaced apart from the first heater by a first distance in a first direction; and a third heater under a third memory cell area of the resistance variable material and spaced apart from the second heater by a second distance in the first direction; wherein the resistance variable material is contiguous in the first direction from the first heater to the third heater; and wherein the second distance is different than the first distance.
地址 Boise ID US
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