发明名称 |
MEMORIES AND METHODS OF OPERATING MEMORIES HAVING MEMORY CELLS SHARING A RESISTANCE VARIABLE MATERIAL |
摘要 |
Memories and methods of operating memories having memory cells sharing a resistance variable material. |
申请公布号 |
US2015103590(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414551317 |
申请日期 |
2014.11.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Redaelli Andrea |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A memory, comprising:
a resistance variable material; a first heater under a first memory cell area of the resistance variable material; a second heater under a second memory cell area of the resistance variable material and spaced apart from the first heater by a first distance in a first direction; and a third heater under a third memory cell area of the resistance variable material and spaced apart from the second heater by a second distance in the first direction; wherein the resistance variable material is contiguous in the first direction from the first heater to the third heater; and wherein the second distance is different than the first distance. |
地址 |
Boise ID US |