| 发明名称 |
Material quality, suspended material structures on lattice-mismatched substrates |
| 摘要 |
Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality. |
| 申请公布号 |
US2015102465(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414512158 |
申请日期 |
2014.10.10 |
| 申请人 |
The Board of Trustees of the Leland Stanford Junior University |
发明人 |
Chen Robert;Harris, JR. James S.;Gupta Suyog |
| 分类号 |
H01L29/06;H01L21/02;H01L21/306;H01L29/161;H01L29/16 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a silicon substrate; one or more device layers each having a composition of Ge, SnGe, or SiSnGe, wherein at least part of the device layers is suspended above the silicon substrate; an etch stop layer having a composition of SnyGe1-y or SixSnyGe1-x-y with 0.05<y≦1, wherein the etch stop layer is disposed on a bottom surface or interface of the device layers facing the silicon substrate. |
| 地址 |
Palo Alto CA US |
