发明名称 |
FORMING FINS OF DIFFERENT MATERIALS ON THE SAME SUBSTRATE |
摘要 |
A semiconductor substrate may be formed by providing an providing a semiconductor-on-insulator (SOI) substrate including a base semiconductor layer, a buried insulator layer above the base semiconductor layer, and a SOI layer comprising a first semiconductor material above the buried insulator layer; forming an isolation region in the SOI layer isolating a first portion of the SOI layer from a second portion of the SOI layer; removing the second portion of the SOI layer to expose a portion of the buried insulator layer; forming a hole in the exposed portion of the buried insulator layer to expose a portion of the base semiconductor layer; and forming a semiconductor layer made of a second semiconductor material on the exposed portion of the base semiconductor layer, so that the replacement semiconductor layer covers the exposed region of the buried insulator layer. |
申请公布号 |
US2015102454(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201314054009 |
申请日期 |
2013.10.15 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Khakifirooz Ali;Reznicek Alexander;Schepis Dominic J. |
分类号 |
H01L27/088;H01L21/8234 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor substrate, the method comprising:
providing a semiconductor-on-insulator (SOI) substrate comprising a base semiconductor layer, a buried insulator layer above the base semiconductor layer, and a SOI layer comprising a first semiconductor material above the buried insulator layer; forming an isolation region in the SOI layer isolating a first portion of the SOI layer from a second portion of the SOI layer; removing the second portion of the SOI layer to expose a portion of the buried insulator layer; forming a hole in the exposed portion of the buried insulator layer to expose a portion of the base semiconductor layer; and forming a semiconductor layer comprising a second semiconductor material on the exposed portion of the base semiconductor layer and the exposed region of the buried insulator layer. |
地址 |
Armonk NY US |