| 发明名称 |
MECHANISMS FOR FORMING GATE DIELECTRIC LAYER |
| 摘要 |
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer. |
| 申请公布号 |
US2015102431(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201314052332 |
申请日期 |
2013.10.11 |
| 申请人 |
Taiwan Seminconductor Manufacturing Co., Ltd. |
发明人 |
CHI Liang-Chen;TSAI Chia-Ming;WANG Chin-Kun;HUANG Jhih-Jie;CHEN Miin-Jang |
| 分类号 |
H01L29/51;H01L21/28 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a nitride buffer layer over the semiconductor substrate, wherein the nitride buffer layer is in an amorphous state; a crystalline gate dielectric layer over the nitride buffer layer; and a gate electrode over the crystalline gate dielectric layer. |
| 地址 |
Hsin-Chu TW |
