| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method for a polishing cloth and a polishing method for a wafer, in which by effectively cleaning a polishing cloth, occurrence of a flaw on a wafer surface after polishing which follows increase of use time of the polishing cloth is suppressed, to allow use of the polishing cloth for a longer time than before.SOLUTION: A cleaning method of a polishing cloth cleans a polishing cloth by supplying a cleaning liquid on a surface of the polishing cloth which is used for polishing a wafer. In the cleaning method of the polishing cloth, the polishing cloth is cleaned for eight hours or longer by supplying aqueous solution of sodium hydroxide or aqueous solution of potassium hydroxide on a surface of the polishing cloth as the cleaning liquid. |
