发明名称 METHOD AND APPARATUS FOR PRODUCTION OF MATERIAL FILM
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus for production of an inclusion fullerene deposition material film which enables control of the ion density in plasma and improvement of the controllability of the material film production process.SOLUTION: A method of producing an inclusion fullerene deposition material film comprises generating plasma containing an inclusion ion 8 and a collision ion identical in polarity to the inclusion ion 8, radiating the plasma to a deposition substrate 18, giving an acceleration energy to the inclusion ion 8 and the collision ion by applying a bias voltage opposite in polarity to the inclusion ion 8 to the deposition substrate 18 with a bias voltage control power source 20 and causing the collision ion to collide with a material molecule 17 constituting the material film so as to make the inclusion ion 8 included in the material molecule 17.
申请公布号 JP2015071537(A) 申请公布日期 2015.04.16
申请号 JP20140210135 申请日期 2014.10.14
申请人 KANEKO HIROYUKI 发明人 KASAMA YASUHIKO;OMOTE KENJI;KUDO NOBORU
分类号 C01B31/02;B82Y30/00;B82Y40/00;C01B21/064;C23C14/06;C23C14/48;H05H1/24 主分类号 C01B31/02
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