| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor which satisfies control of a threshold voltage and improvement in an on-state current in a transistor having a first gate and a second gate which sandwich a channel formation region.SOLUTION: In a semiconductor device, a control voltage for controlling a threshold voltage is applied to a second gate during a period where a first voltage for turning off a transistor is applied to a first gate and a voltage obtained by adding a changed voltage of a signal supplied to the first gate to the control voltage is applied to the second gate during a period where the second voltage for turning on the transistor is applied to the first gate.</p> |
