MEMORY DEVICE RETENTION MODE BASED ON ERROR INFORMATION

摘要

A controller for a memory device has a power control section to control power to a memory element in an operation mode and in a retention mode. A monitoring section receives and monitors error information and a storage section stores a retention parameter. In the operation mode, the power control section causes an operation voltage to be applied to the memory element, and in the retention mode, the power control section causes a time-varying voltage to be applied to the memory. The power control section also causes the voltage across the memory element to change in the retention mode between a first retention voltage and a second retention voltage based on the retention parameter.

主权项

1. A controller for a memory device, comprising:
a power control section to control power to a memory element of the memory device in an operation mode and in a retention mode; a monitoring section for receiving and monitoring error information indicative of an error in the memory device; and a storage section for storing a retention parameter, wherein,
the power control section causes an operation voltage to be applied to the memory element in the operation mode, and causes a time-varying voltage to be applied to the memory element in the retention mode,the time-varying voltage changes between a first retention voltage and a second retention voltage, the second retention voltage being less than the first retention voltage, and the first retention voltage being less than the operation voltage,the power control section controls the second retention voltage based on the retention parameter, andthe retention parameter is set based on the error information.