部分隔离矽基板之三族氮化物半导体装置之制作方法;III-nitride based semiconductor devices on partial isolated Si substrate

摘要

一种部分隔离矽基板之三族氮化物半导体装置之制作方法，系从晶片上方直接蚀刻，不需要进行基板转移以及矽基板深蚀刻之制程，可使其线宽问题有效解决，并且省去基板转移中必须磨薄矽基板造成元件接续制程不易与大尺寸晶片容易产生弯曲（Bowing）现象等制程问题，使本发明得以简化其元件制程复杂度、降低制程成本之同时，亦可与现有制程相容，并能通用于大尺寸晶片制造，使其可以提升元件之崩溃电压，更透过不用磨薄矽基板，将矽保留而使导通电流不会降低之外，亦能减缓其散热问题。;A method for fabricating semiconductor on silicon (Si) substrate is provided. The semiconductor is III-nitride based. The Si substrate is partial isolated . Etching is directly processed on a chip for solving wire-width problem. The Si substrate does not need to be thin. The chip can be large scaled and prevented from bowing. Thus, the present invention simplifies producing procedure and reduces production cost. Besides, with a large-scaled chip, the breakdown voltage is enhanced; and, without making the Si substrate thin, the breakover current of Si is remained the same and the heat problem is slowed down.