METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

摘要

A method for forming a semiconductor structure. A dielectric layer including adjacent first and second dielectric regions is formed on a substrate. The dielectric layer includes a curable material. The first dielectric region is cured. A portion of the second dielectric region is etched to form an opening and leave a remaining portion of the second dielectric region. After the etching step, the remaining portion of the second dielectric region is cured.

主权项

1. A method for forming a semiconductor structure, comprising:
forming a dielectric layer comprising adjacent first and second dielectric regions on a substrate and comprising a curable material; curing the first dielectric region; and etching a portion of the second dielectric region to form an opening and leave a remaining portion of the second dielectric region; forming a patterned light-cutting layer on the cured first dielectric region; and after the etching step, curing the remaining portion of the second dielectric region, wherein during curing the remaining portion of the second dielectric region, the cured first dielectric region is covered by the patterned light-cutting layer.