| 发明名称 |
TOOL CONFIGURATION AND METHOD FOR EXTREME ULTRA-VIOLET (EUV) PATTERNING WITH A DEFORMABLE REFLECTIVE SURFACE |
| 摘要 |
Some embodiments of the present disclosure relates to a tool configuration and method for EUV patterning with a deformable reflective surface comprising a mirror or reticle. A radiation source provides EUV radiation which is reflected off the deformable reflective surface to transfer a reticle pattern a semiconductor workpiece. A metrology tool measures a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern. And, a topology of the deformable reflective surface is changed based upon the residual vector to minimize a total magnitude of the residual vector. |
| 申请公布号 |
US2015104745(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201314051683 |
申请日期 |
2013.10.11 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Huang Chia-Ching;Chen Tzu-Hsiang;Hsu Chia-Hao;Chen Chia-Chen |
| 分类号 |
G03F7/20;G01N21/956 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metrology system, comprising:
a radiation source configured to transfer a reticle pattern from a reticle to a semiconductor workpiece; a deformable reflective surface configured to reflect radiation carrying the reticle pattern; a metrology tool configured to measure a residual vector formed between a first shape of the semiconductor workpiece and a second shape of the reticle pattern; and a plurality of deformation elements configured to change a topology of the deformable reflective surface based upon the residual vector. |
| 地址 |
Hsin-Chu TW |
