| 发明名称 |
Extreme Ultraviolet Lithography Process and Mask |
| 摘要 |
A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having first and second reflective regions. The system also includes an illumination to expose the mask to produce a resultant reflected light form the mask. The resultant reflected light is constructed by a first reflected light reflected from the first reflective region and a second reflected light reflected from the second reflective region. The resultant reflected light contains mainly diffracted light. The system also a projection optics box (POB) to collect and direct resultant reflected light to expose a target. |
| 申请公布号 |
US2015104734(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201314052506 |
申请日期 |
2013.10.11 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
| 分类号 |
G03F1/24;G03F7/20 |
主分类号 |
G03F1/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An extreme ultraviolet (EUV) lithography system, comprising:
a mask having first and second reflective regions; an illuminator to expose the mask to produce a resultant reflected light including a first reflected light reflected from the first reflective region and a second reflected light reflected from the second reflective region, wherein the resultant reflected light includes diffracted light; and optics to collect and direct the resultant reflected light towards a target. |
| 地址 |
Hsin-Chu TW |
