SEMICONDUCTOR DEVICES IN SIC USING VIAS THROUGH N-TYPE SUBSTRATE FOR BACKSIDE CONTACT TO P-TYPE LAYER

摘要

A Silicon Carbide (SiC) semiconductor device having back-side contacts to a P-type region and methods of fabrication thereof are disclosed. In one embodiment, an SiC semiconductor device includes an N-type substrate and an epitaxial structure on a front-side of the N-type substrate. The epitaxial substrate includes a P-type layer adjacent to the N-type substrate and one or more additional SiC layers on the P-type layer opposite the N-type substrate. The semiconductor device also includes one or more openings through the N-type substrate that extend from a back-side of the N-type substrate to the P-type layer and a back-side contact on the back-side of the N-type substrate and within the one or more openings such that the back-side contact is in physical and electrical contact with the P-type layer. The semiconductor device further includes front-side contacts on the epitaxial structure opposite the N-type substrate.

主权项

1. A semiconductor device comprising:
an N-type Silicon Carbide substrate; an epitaxial structure on a first side of the N-type Silicon Carbide substrate, the epitaxial structure comprising a P-type Silicon Carbide layer adjacent to the N-type Silicon Carbide substrate; one or more openings through the N-type Silicon Carbide substrate that extend from a second side of the N-type Silicon Carbide substrate to the P-type Silicon Carbide layer in the epitaxial structure, the second side of the N-type Silicon Carbide substrate being opposite the first side of the N-type Silicon Carbide substrate, and the one or more openings expose greater than or equal to about 40% of the P-type Silicon Carbide layer; a first contact on the epitaxial structure opposite the N-type Silicon Carbide substrate; and a second contact on the second side of the N-type Silicon Carbide substrate and within the one or more openings through the N-type Silicon Carbide substrate such that the second contact is in physical and electrical contact with the P-type Silicon Carbide layer; wherein, in a forward conduction state of the semiconductor device, current flows between the first contact and the second contact through the epitaxial structure.