| 摘要 |
A MOSFET structure and a manufacturing method thereof. The method comprising: a. providing a substrate (100); b. forming a SiGe channel layer (101), a dummy gate stack (200), and a sacrifice side wall (102) on the substrate (100); c. removing the SiGe channel layer (101) uncovered by the dummy gate stack (200) and located beneath the two sides of the dummy gate stack (200), and removing a part of the substrate (100) to form a hollow (201); d. selectivity epitaxially growing a first semiconductor layer (300) on the semiconductor structure so as to fill the base and the side wall area of the hollow (201); e. removing the sacrifice side wall (102), filling a second semiconductor layer (400) in the part of the hollow (201) unfilled by the first semiconductor layer (300). With the semiconductor structure manufactured by the method, the carrier mobility in the channel can be improved, harmful influence of short channel effect can be restrained effectively, and the performance of the apparatus can be improved. |
