| 摘要 |
一种白光二极体，一P型层；一穿隧结构，覆盖于该P型层上，该穿隧结构包括一第一能障层、一主动层、一第二能障层，其中该第一能障层包括一第一金属氧化物层，该主动层包括一第二金属氧化物层，该第二能障层包括一第三金属氧化物层；一N型层，覆盖于该穿隧结构上；一N型电极，接触于该N型层；以及一P型电极，接触于该P型层；其中，该第二金属氧化物层的能隙低于该第一金属氧化物层的能隙，且该第二金属氧化物层的能隙低于该第一金属氧化物层的能隙。; a tunneling structure covered on the P layer; an N layer covered on the tunneling structure; an N electrode contacted to the N layer; and a P electrode contacted to the P layer. Furthermore, the tunneling structure includes a first barrier layer, an active layer, and a second barrier layer. The first barrier layer includes an oxide of a first metal, the active layer includes an oxide of a second metal, and the second barrier layer includes an oxide of a third metal. Moreover, an energy gap of the oxide of the second metal is lower than that of the oxide of the first metal, and the energy gap of the oxide of the second metal is lower than that of the oxide of the third metal. |
