发明名称 ELECTRONIC COMPONENT MODULE
摘要 A plating layer of a Cu—M-based alloy (M represents Ni and/or Mn) is formed on an end surface of a connection terminal member at an exposed side, the Cu—M-based alloy being capable of generating an intermetallic compound with an Sn-based low-melting-point metal contained in a bonding material forming a bonding portion and having a lattice constant different from that of the intermetallic compound by 50% or more. In the reflow process, even if the bonding material is about to flow out by re-melting thereof, since the bonding material is brought into contact with the Cu—M-based plating layer, a high-melting-point alloy of the intermetallic compound is formed so as to block the interface between the connection terminal member and the resin layer.
申请公布号 US2015103495(A1) 申请公布日期 2015.04.16
申请号 US201414576452 申请日期 2014.12.19
申请人 Murata Manufacturing Co., Ltd. 发明人 Nakagoshi Hideo;Takagi Yoichi;Ogawa Nobuaki;Takaoka Hidekiyo;Nakono Kosuke;Kamada Akihiko;Mizushiro Masaaki
分类号 H05K7/02;H05K1/18 主分类号 H05K7/02
代理机构 代理人
主权项 1. An electronic component module comprising: a wiring substrate having a first and a second primary-surface facing each other; an electronic component mounted at least on the first primary surface of the wiring substrate; a conductive land formed at least on the first primary surface of the wiring substrate; a columnar connection terminal member which has a first and a second end surface facing each other, which is arranged so that the first end surface faces the conductive land, and which is bonded thereto with a bonding portion interposed therebetween; and a resin layer formed on the first primary surface of the wiring substrate so as to seal the electronic component and the connection terminal member while the second end surface of the connection terminal member is exposed, wherein the bonding portion contains a low-melting-point metal which is an Sn element or an alloy containing at least 70 percent by weight of Sn, a high-melting-point alloy formed of an intermetallic compound generated by the low-melting-point metal and a Cu—M-based alloy is arranged at least at the periphery of an end portion of the connection terminal member at a second end surface side so as to block the interface between the resin layer and the connection terminal member at the second end surface side of the connection terminal member, and the M comprises Ni and/or Mn.
地址 Kyoto JP