| 摘要 |
Provided is a semiconductor device. The semiconductor device comprises: a ground selection line, a plurality of word lines, and a string selection line separated in a first direction which is vertical to an upper surface of a substrate on the substrate; and a channel layer penetrating the ground selection line, a plurality of word lines, and the string selection line, and connected to the substrate, wherein parts of the channel layer formed on the same level with a plurality of word lines comprise n-type impurities. |
