单光子光源组件及其制造方法;SINGLE PHOTON SOURCE AND METHOD FOR MAKING THE SAME

摘要

一种单光子光源组件制造方法，包括以下步骤：提供一前驱体，该前驱体包含一基板及在该基板上依次生长的一未掺杂的低温GaN层、一未掺杂的高温GaN层、一N型GaN层、一量子阱层和一结构层；蚀刻所述前驱体的结构层、量子阱层和N型GaN层并形成楔形结构的阵列和一平面区；蚀刻楔形结构为柱状结构；在NH3气氛中对从以上步骤得到的半成品进行热处理；在柱状结构侧面及柱状结构之间的N型GaN层的上表面生长一高介电层；在柱状结构的顶面所在平面之上依次生长一P型GaN层和一ITO层；在ITO层上和平面区上分别设置电极。; etching the structure layer, the quantum well layer and the N-type GaN layer to form wedge structures and a surface area; etching wedge structures to columnar structures; annealing a semi-finished product from the above steps in NH3 environment; forming a dielectric layer out of a flank of columnar structures and on a surface of the N-type GaN layer between columnar structures; forming a P-type GaN layer and a ITO layer on a plane of a top surface of columnar structures successively; and arranging two electrodes respectively on the ITO layer and the surface area.