发明名称 |
SEMICONDUCTOR DEVICE HAVING A PATTERNED GATE DIELECTRIC |
摘要 |
In one embodiment, a semiconductor device includes an isolated trench-electrode structure. The semiconductor device is formed using a modified photolithographic process to produce alternating regions of thick and thin dielectric layers that separate the trench electrode from regions of the semiconductor device. The thin dielectric layers can be configured to control the formation channel regions, and the thick dielectric layers can be configured to reduce switching losses. |
申请公布号 |
US2015102403(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414577044 |
申请日期 |
2014.12.19 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
Kuruc Marian;Vavro Juraj |
分类号 |
H01L29/423;H01L29/74;H01L29/78;H01L29/739 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Phoenix AZ US |