| 发明名称 |
HYBRID SILICON GERMANIUM SUBSTRATE FOR DEVICE FABRICATION |
| 摘要 |
Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first buffer layer, a second buffer layer, a n-type transistor structure, and a p-type transistor structure. The first buffer layer having a first germanium concentration is formed on a substrate. The second buffer layer having a second germanium concentration is formed on the substrate, the second germanium concentration being larger than the first germanium concentration. The n-type transistor structure is formed on the first buffer layer, and the p-type transistor structure is formed on the second buffer layer. |
| 申请公布号 |
US2015102385(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201314050495 |
申请日期 |
2013.10.10 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
FUNG KA-HING |
| 分类号 |
H01L21/02;H01L21/8238 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device structure, comprising:
a first buffer layer having a first germanium concentration formed on a substrate; a second buffer layer having a second germanium concentration formed on the substrate, the second germanium concentration being larger than the first germanium concentration; a n-type transistor structure formed on the first buffer layer; and a p-type transistor structure formed on the second buffer layer. |
| 地址 |
Hsinchu TW |
