| 发明名称 |
ESD Protection with Asymmetrical Bipolar-Based Device |
| 摘要 |
An electrostatic discharge (ESD) protection device includes a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type, and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type. The first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device includes a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device. |
| 申请公布号 |
US2015102384(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201314053716 |
申请日期 |
2013.10.15 |
| 申请人 |
Zhan Rouying;Gill Chai Ean;Hong Changsoo;Kaneshiro Michael H. |
发明人 |
Zhan Rouying;Gill Chai Ean;Hong Changsoo;Kaneshiro Michael H. |
| 分类号 |
H01L27/02;H01L23/60;H01L29/66 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrostatic discharge (ESD) protection device comprising:
a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type; and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type; wherein the first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device comprises a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device. |
| 地址 |
Gilbert AZ US |
