MOSFET STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention provides a MOSFET structure and a method for manufacturing the MOSFET structure. The MOSFET structure comprises: a substrate (100); a gate stack layer (600) located above the substrate (100); source/drain regions (305) located in the substrate at the two sides of the gate stack layer (600); an interlayer dielectric layer (400) covering the source/drain regions; source/drain extension regions (205) located below the two side edges of the gate stack layer (600); below the source/drain extension regions (205) located below the two side edges of the gate stack layer (600) are insulators (200) free from mutual connection. The MOSFET structure of the present invention can effectively reduce the influence of the DIBL effect of devices on performances.