| 发明名称 |
IN FILM, IN SPUTTERING TARGET FOR FORMING IN FILM, AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>Provided is an In sputtering target having a composition containing a total of 0.5 to 10.0 atom% of at least one type of element selected from the group consisting of Bi, Sb, Sn, and Zn, the remainder comprising In and unavoidable impurities.</p> |
| 申请公布号 |
WO2015053265(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
WO2014JP76811 |
申请日期 |
2014.10.07 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
UMEMOTO KEITA;ZHANG SHOUBIN;KATO SHINJI |
| 分类号 |
C23C14/34;C23C14/14;H01L31/0749 |
主分类号 |
C23C14/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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