| 摘要 |
PROBLEM TO BE SOLVED: To provide a blank mask and a photomask.SOLUTION: A photomask provided with a high-resolution pattern of a half-pitch of 32 nm grade or higher, especially 22 nm grade or higher by forming a light-shielding film and a blank photomask which has a high etching selection rate to the light-shielding film and is provided with a thin hard film, on a transparent substrate. A photomask excellent in quality is provided by adjusting the composition ratio of a metal and silicon(Si) to light elements, with the metal and elements constituting the light-shielding film, and suppressing pattern damage by XeFgas in an electronic repairing step. |
