发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A substrate processing apparatus capable of accurately aligning a center of a substrate, such as a wafer, with an axis of a substrate stage and capable of processing the substrate without bending the substrate is disclosed. The substrate processing apparatus includes a first substrate stage having a first substrate-holding surface configured to hold a first region in a lower surface of the substrate, a second substrate stage having a second substrate-holding surface configured to hold a second region in the lower surface of the substrate, a stage elevator configured to move the first substrate-holding surface between an elevated position higher than the second substrate-holding surface and a lowered position lower than the second substrate-holding surface, and an aligner configured to measure an amount of eccentricity of a center of the substrate from the axis of the second substrate stage and align the center of the substrate with the axis of the second substrate stage.
申请公布号 US2015104999(A1) 申请公布日期 2015.04.16
申请号 US201414510033 申请日期 2014.10.08
申请人 EBARA CORPORATION 发明人 SEKI Masaya;TOGAWA Tetsuji;NAKANISHI Masayuki;ITO Kenya
分类号 B24B37/34;B24B37/30;B24B37/10 主分类号 B24B37/34
代理机构 代理人
主权项 1. A substrate processing apparatus for processing a substrate, comprising: a first substrate stage having a first substrate-holding surface configured to hold a first region in a lower surface of the substrate; a second substrate stage having a second substrate-holding surface configured to hold a second region in the lower surface of the substrate; a second-stage rotating mechanism configured to rotate the second substrate stage about an axis of the second substrate stage; a stage elevator configured to move the first substrate-holding surface between an elevated position higher than the second substrate-holding surface and a lowered position lower than the second substrate-holding surface; and an aligner configured to measure an amount of eccentricity of a center of the substrate from the axis of the second substrate stage and align the center of the substrate with the axis of the second substrate stage.
地址 Tokyo JP