发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
A substrate processing apparatus capable of accurately aligning a center of a substrate, such as a wafer, with an axis of a substrate stage and capable of processing the substrate without bending the substrate is disclosed. The substrate processing apparatus includes a first substrate stage having a first substrate-holding surface configured to hold a first region in a lower surface of the substrate, a second substrate stage having a second substrate-holding surface configured to hold a second region in the lower surface of the substrate, a stage elevator configured to move the first substrate-holding surface between an elevated position higher than the second substrate-holding surface and a lowered position lower than the second substrate-holding surface, and an aligner configured to measure an amount of eccentricity of a center of the substrate from the axis of the second substrate stage and align the center of the substrate with the axis of the second substrate stage. |
申请公布号 |
US2015104999(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414510033 |
申请日期 |
2014.10.08 |
申请人 |
EBARA CORPORATION |
发明人 |
SEKI Masaya;TOGAWA Tetsuji;NAKANISHI Masayuki;ITO Kenya |
分类号 |
B24B37/34;B24B37/30;B24B37/10 |
主分类号 |
B24B37/34 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus for processing a substrate, comprising:
a first substrate stage having a first substrate-holding surface configured to hold a first region in a lower surface of the substrate; a second substrate stage having a second substrate-holding surface configured to hold a second region in the lower surface of the substrate; a second-stage rotating mechanism configured to rotate the second substrate stage about an axis of the second substrate stage; a stage elevator configured to move the first substrate-holding surface between an elevated position higher than the second substrate-holding surface and a lowered position lower than the second substrate-holding surface; and an aligner configured to measure an amount of eccentricity of a center of the substrate from the axis of the second substrate stage and align the center of the substrate with the axis of the second substrate stage. |
地址 |
Tokyo JP |