发明名称 |
NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM |
摘要 |
An method of operating a memory system including a plurality of memory cells includes changing an operation mode at least some of the memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which an operation mode is changed on the basis of a change erase condition when the operation mode is changed. When memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition, and when memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition. The change erase condition is different from at least one of the first and second erase conditions. |
申请公布号 |
US2015103597(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414467920 |
申请日期 |
2014.08.25 |
申请人 |
PARK HYUN-WOOK;PARK KITAE;JEONG JAEYONG |
发明人 |
PARK HYUN-WOOK;PARK KITAE;JEONG JAEYONG |
分类号 |
G11C16/16;G11C16/04 |
主分类号 |
G11C16/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method of operating a memory system including a plurality of memory cells, the method comprising:
changing an operation mode of at least some memory cells among the plurality of memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which the operation mode is changed, on a basis of a change erase condition when the operation mode is changed, wherein when memory cells among the plurality of memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition and when memory cells among the plurality of memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition, and wherein the change erase condition is different from at least one of the first and second erase conditions. |
地址 |
HWASEONG-SI KR |