SEMICONDUCTOR MEMORY DEVICE

摘要

This semiconductor memory device comprises a memory cell array that includes: a plurality of first lines; a plurality of second lines intersecting the plurality of first lines; a plurality of memory cells each disposed at an intersection of the plurality of first lines and the plurality of second lines and including a variable resistance element; and a select transistor respectively connected to an end of the plurality of first lines. The select transistor includes a gate electrode, a gate insulating film, and a conductive layer. Moreover, one end of that conductive layer is connected to the end of the first line, and a non-linear resistance layer configured from a non-linear material is connected between the first line and the conductive layer.

主权项

1. A semiconductor memory device, comprising:
a memory cell array including: first line; second lines intersecting the first line; memory cells disposed at an intersection of the first line and the second lines and including a variable resistance element; and a select transistor respectively connected to an end of the first line, the selector including a gate electrode, a gate insulating film, and a semiconductor layer, one end of the semiconductor layer being connected to the end of the first line, and a non-linear resistance layer disposed between the first line and the semiconductor layer, the non-linear resistance layer being configured from a non-linear material.