发明名称 |
SOLID-STATE IMAGING DEVICE, METHOD OF FORMING MICROLENS IN SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
A solid-state imaging device comprises an imaging pixel located in a light receiving region, the imaging pixel being a component of a unit pixel that is one of a plurality of unit pixels arranged in an array direction. A phase difference detection pixel is located in the light receiving region and is a component of the unit pixel, and has a corresponding photodiode with an upper surface. A first microlens corresponds to the imaging pixel, and a second microlens corresponding to the phase difference detection pixel. The second microlens has a first bottom surface in the array direction and a second bottom surface in a direction diagonal to the array direction, the second bottom surface being closer to the upper surface of the photodiode than the first bottom surface. |
申请公布号 |
US2015102442(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201314368720 |
申请日期 |
2013.02.27 |
申请人 |
Sony Corporation |
发明人 |
Ootsuka Yoichi |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state imaging device comprising:
an imaging pixel located in a light receiving region, the imaging pixel being a component of a unit pixel, the unit pixel being one of a plurality of unit pixels arranged in an array direction; a phase difference detection pixel located in the light receiving region and being a component of the unit pixel; a photodiode corresponding to at least the phase difference detection pixel and having an upper surface; a first microlens corresponding to the imaging pixel; and a second microlens corresponding to the phase difference detection pixel, the second microlens having a first bottom surface in the array direction and a second bottom surface in a direction diagonal to the array direction, the second bottom surface being closer to the upper surface of the photodiode than the first bottom surface. |
地址 |
Tokyo JP |