| 摘要 |
Provided is a semiconductor device in which a memory cell (101) includes: a memory transistor (10A) that has a channel length (L1) and a channel width (W1); and a plurality of selection transistors (10B) that are each electrically connected in series with the memory transistor and that independently have a channel length (L2) and a channel width (W2). The memory transistor and each of the plurality of selection transistors comprises an active layer (7A) that is formed from a shared oxide semiconductor film. The memory transistor can be irreversibly changed from a semiconductor state in which a drain current (Ids) depends on a gate voltage (Vg) to a resistor state in which the drain current (Ids) does not depend on the gate voltage (Vg). The channel length (L2) is longer than the channel length (L1). |
