| 摘要 |
This semiconductor apparatus is provided with an internal wiring layer (23), a plurality of insulating layers (33, 34) laminated onto the internal wiring layer, and an electrode pad (25) arranged above the plurality of insulating layers such that at least a portion thereof faces at least a portion of the internal wiring layer, with the plurality of insulating layers therebetween. Of the plurality of insulating layers, the adjacent insulating layer (34) which is laminated onto the internal wiring layer has a Young's modulus lower than the Young's modulus of the other insulating layer (33). The breakdown strength of the adjacent insulating layer is greater than the breakdown strength of the other insulating layer. |
