| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a current (allowable current) flowing through a built-in protection diode is large.SOLUTION: A ground electrode 52 surrounding a bonding pad 50 and having a structure similar to the bonding pad 50 is formed. To the bonding pad 50, an n-type nplug layer 31 that penetrates an n layer is connected. The nplug layer 31 is connected, on its lower side, to a high-concentration n-type nembedded layer (embedded semiconductor layer) 32 which is formed in an area similar to that of the bonding pad 50 in the vicinity of an interface of a p layer 22 and an n layer 23. On the n layer 23 on a lower side of the ground electrode 52, a pplug layer 33 is formed. The pplug layer 33 is connected to the pembedded layer 34 on its lower side. In the above configuration, a pn junction diode is formed between the nembedded layer (embedded semiconductor layer) 32 and p layer (substrate-side semiconductor layer) 22, and it functions as a protection diode.</p> |
