| 摘要 |
<p>Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises low average particle size (e.g., 30 nm or less) wet-process ceria abrasive particles, at least one alcohol amine, and water, wherein said polishing composition has a pH of 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.</p> |
