| 摘要 |
<p>A non-volatile memory device, comprising: a substrate; a plurality of string stacks disposed over the substrate, each string stack comprising a long axis and a short axis in a plane parallel to the substrate, the long axis extending along a y- direction and the short axis extending along an x-direction, each string stack comprising a plurality of strings being stacked in a direction vertical to the substrate and having a first end and a second end at different locations in the y-direction, the plurality of string stacks comprising a first and a second set of string stacks, at least some of the string stacks of the first set of string stacks being offset along the x- direction from at least some of the string stacks of the second set of string stacks.</p> |
